DocumentCode
1753167
Title
Molecular Beam Epitaxy of GaAs Nanowires on Si Substrates
Author
Ihn, Soo-Ghang ; Song, Jong-In ; Kim, Young-Hun ; Lee, Jeong Yong ; Soo-Ghang Ihn ; Jong-In Song ; Young-Hun Kim ; Jeong Yong Lee
Author_Institution
Dept. of Information and Communications, Gwangju Institute of Science and Technology (GIST), Gwangju, Korea
Volume
1
fYear
2006
fDate
17-20 June 2006
Firstpage
113
Lastpage
115
Abstract
Au-catalyzed GaAs nanowires were epitaxially grown on Si substrates by vapor-liquid-solid growth with the molecular beam epitaxy (MBE) method. The MBE growth could produce controlled crystalline orientation and uniform diameter along the wire axis of the GaAs nanowires by adjusting growth conditions such as growth temperature and V-III flux ratio. Growths of GaAs〈001〉 as well as GaAs〈111〉 nanowires were observed by transmission electron microscopy and scanning electron microscopy. Well-aligned GaAs〈111〉 nanowires on a Si
Keywords
GaAs on Si; Crystallization; Gallium arsenide; III-V semiconductor materials; Materials science and technology; Molecular beam epitaxial growth; Nanowires; Optical microscopy; Scanning electron microscopy; Substrates; Transmission electron microscopy; GaAs on Si; molecular beam epitaxy; nanowires;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247581
Filename
1717031
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