Title :
Parameter Selection for Single-Electron Threshold Logic with Reliability Analysis
Author :
Chen, Chunhong ; Mi, Jialin
Author_Institution :
Department of Electrical and Computer Engineering, University of Windsor, Ontario, Canada N9B 3P4, Email: cchen@uwindsor.ca
Abstract :
This paper proposes a general strategy of parameter selection for single-electron threshold gates. By considering the background charges with the gates, we analyze and optimize the parameters to improve their reliability. All circuits with given parameters are simulated and verified by SIMON — a simulator for single-electron circuits
Keywords :
parameters; reliability; single-electron threshold logic; Boolean functions; CMOS logic circuits; Capacitance; Circuit simulation; Electrons; Logic circuits; Logic design; Logic devices; RLC circuits; Voltage; parameters; reliability; single-electron threshold logic;
Conference_Titel :
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN :
1-4244-0077-5
DOI :
10.1109/NANO.2006.247654
