Quantum Dot Amplifiers for 100 Gbit Ethernet

Author

Bimberg, D. ; Laemmlin, M. ; Meuer, C. ; Fiol, G. ; Kuntz, M. ; Schliwa, A. ; Ledentsov, N.N. ; Kovsh, A.R.

Author_Institution

Institut fuer Festkoerperphysik, Technische Univ. Berlin

Volume

2

fYear

2006

fDate

18-22 June 2006

Firstpage

237

Lastpage

241

Abstract

Chip gain of 26 dB upon amplification of 1.3 picosecond pulses at frequencies up to 80 GHz is demonstrated for temperature stable QD-SOAs. Pulse broadening in the below 200 fs range is observed. The results agree with our predictions on decoupling of gain and index of refraction in Q-based amplifiers. Modelling of wavefunctions in stacked QD-layers based on 8-band k.p-theory indicates the potential of obtaining in the future polarisation insensitive amplification

Keywords

k.p calculations; optical communication equipment; optical fibre LAN; optical pulse generation; quantum dot lasers; refractive index; semiconductor optical amplifiers; 1.3 ps; 100 Gbit; 26 dB; 8-band k.p-theory; Ethernet; chip gain; picosecond pulse amplification; pulse broadening; quantum dot amplifiers; temperature stability; wavefunctions; Coatings; Ethernet networks; Gain; Optical amplifiers; Optical waveguides; Optical wavelength conversion; Power generation; Pulse amplifiers; Quantum dots; Semiconductor optical amplifiers; 100 GBit Ethernet; quantum dot; semiconductor optical amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2006 International Conference on

Conference_Location

Nottingham

Print_ISBN

1-4244-0235-2

Electronic_ISBN

1-4244-0236-0

Type

conf

DOI

10.1109/ICTON.2006.248326

Filename

4013722