DocumentCode :
1753949
Title :
Optimization of CVD ClF3 non-plasma cleaning condition with advanced endpoint detection tool
Author :
Hamaguchi, Yohei ; Fujii, Kazuyuki ; Shirakawa, Kenji ; Hanazaki, Minoru ; Katayama, Katsuo ; Toyota, Masato
Author_Institution :
Renesas Electron. Corp., Hitachinaka, Japan
fYear :
2010
fDate :
18-20 Oct. 2010
Firstpage :
1
Lastpage :
4
Abstract :
The advanced EPD (Endpoint Detection) tool was developed originally and its application for NF3 remote plasma cleaning was reported in ISSM2008. In this paper, we applied the tool to ClF3 gas cleaning and successfully detected the endpoint. The validity of the endpoint was verified by photo luminescence measurement and dependence on deposition thickness. Furthermore, ClF3 gas cleaning condition was optimized for mass production WSi (tungsten silicide) CVD with the tool.
Keywords :
chemical vapour deposition; photoluminescence; tungsten compounds; CVD ClF3 non-plasma cleaning condition; ClF3 gas cleaning; NF3 remote plasma cleaning; WSi; deposition thickness; endpoint detection tool; photo luminescence measurement; Cleaning; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location :
Tokyo
ISSN :
1523-553X
Print_ISBN :
978-1-4577-0392-8
Electronic_ISBN :
1523-553X
Type :
conf
Filename :
5750218
Link To Document :
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