DocumentCode
1753957
Title
Analysis of gate CD drift by EES
Author
Harashima, Keiichi ; Ajima, Makoto ; Akimoto, Takeshi
Author_Institution
Renesas Electron. Corp., Sagamihara, Japan
fYear
2010
fDate
18-20 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
To reduce the gate CD variation, effect of Etch Tool variation to CD drift was investigate. On the basis of the statistical analysis, the prediction model of the gate CD was constructed. This model was used to estimate the effect of equipment parameter on gate CD variation. The decrease of the CD variation was achieved by adjusting the equipment parameter selected from this model on mass production of system LSI.
Keywords
etching; mass production; semiconductor device manufacture; EES; engineering equipment system; etch tool variation; gate CD drift; gate CD variation; mass production;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-1-4577-0392-8
Electronic_ISBN
1523-553X
Type
conf
Filename
5750226
Link To Document