Non-destructive inline evaluation method for the gate insulator in the nodes beyond the 22nm generation

Author

Nishi, Yuya ; Hirano, Toshimasa ; Tanaka, Kazumiti ; Soh, Yuki ; Yoshioka, Masao ; Kubota, Hiroshi ; Kobayashi, Kazuhiro ; Yamashita, Yoshiyuki ; Yoshino, Akira

Author_Institution

Grad. Sch. of Sci. & Technol., Kumamoto Univ., Kumamoto, Japan

fYear

2010

fDate

18-20 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

We propose a new reliability evaluation technology by using “Pulse-Photoconductivity Method” to measure the electrical and dielectrical properties of the insulator sample directly and non-destructively. We evaluate the electrical characteristics of SiO₂ and HfO₂ film by measuring the transient phenomenon of photoconductive signals and indicate the electrical leakage current vs the contaminated level of the sample insulator. The method is effective to the in-line process in next generation mass-production.

Keywords

contamination; dielectric properties; electric breakdown; insulating thin films; leakage currents; mass production; nondestructive testing; photoconductivity; reliability; transient analysis; HfO₂; SiO₂; contaminated level; dielectrical property; electrical characteristics; electrical leakage current; gate insulator; in-line process; next generation mass-production; nondestructive inline evaluation method; photoconductive signals; pulse-photoconductivity method; reliability evaluation technology; sample insulator; transient phenomenon; Current measurement; Insulators; Logic gates; Optical amplifiers; Physics; Silicon; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing (ISSM), 2010 International Symposium on

Conference_Location

Tokyo

ISSN

1523-553X

Print_ISBN

978-1-4577-0392-8

Electronic_ISBN

1523-553X

Type

conf

Filename

5750231