Title :
Non-destructive inline evaluation method for the gate insulator in the nodes beyond the 22nm generation
Author :
Nishi, Yuya ; Hirano, Toshimasa ; Tanaka, Kazumiti ; Soh, Yuki ; Yoshioka, Masao ; Kubota, Hiroshi ; Kobayashi, Kazuhiro ; Yamashita, Yoshiyuki ; Yoshino, Akira
Author_Institution :
Grad. Sch. of Sci. & Technol., Kumamoto Univ., Kumamoto, Japan
Abstract :
We propose a new reliability evaluation technology by using “Pulse-Photoconductivity Method” to measure the electrical and dielectrical properties of the insulator sample directly and non-destructively. We evaluate the electrical characteristics of SiO2 and HfO2 film by measuring the transient phenomenon of photoconductive signals and indicate the electrical leakage current vs the contaminated level of the sample insulator. The method is effective to the in-line process in next generation mass-production.
Keywords :
contamination; dielectric properties; electric breakdown; insulating thin films; leakage currents; mass production; nondestructive testing; photoconductivity; reliability; transient analysis; HfO2; SiO2; contaminated level; dielectrical property; electrical characteristics; electrical leakage current; gate insulator; in-line process; next generation mass-production; nondestructive inline evaluation method; photoconductive signals; pulse-photoconductivity method; reliability evaluation technology; sample insulator; transient phenomenon; Current measurement; Insulators; Logic gates; Optical amplifiers; Physics; Silicon; Stimulated emission;
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4577-0392-8
Electronic_ISBN :
1523-553X
