DocumentCode
1753966
Title
Methodology for N% recovery post PM for aged/non-annealed SPA oxynitride gate without XPS referencing
Author
Kim, JaeHyun ; Lee, ChangHwan ; Heo, SeongJun ; HyungWon Yoo ; Kim, ChulHong ; Yoo, HyungWon ; Yoon, Nam Hee ; Jiang, Zhiming ; Moon, Hwan Seong
Author_Institution
HYNIX, Icheon, South Korea
fYear
2010
fDate
18-20 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
In this DoE (design of experiment) study, we reported a relatively simple methodology which enables Aleris VUVSE system to well maintain the thickness and nitrogen content (N%) measurement accuracy and matching of DPN, pre and post PM (preventive maintenance) of system, via rely on monitoring of the aged/non-annealed nitrided oxide samples N% correlation function, without the need to rely on the standard XPS referencing targets.
Keywords
preventive maintenance; semiconductor industry; Aleris VUVSE system; N% recovery post PM; aged SPA oxynitride gate; design of experiment; nitrogen content; nonannealed SPA oxynitride gate; preventive maintenance; Aging; Correlation; Nitrogen; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-1-4577-0392-8
Electronic_ISBN
1523-553X
Type
conf
Filename
5750235
Link To Document