Title :
Hydrogen concentration effect during RIE process for piezo resistor of MEMS pressure sensor
Author :
Egami, Shin ; Nakagawa, Shinya ; Yoda, Tetsuya
Author_Institution :
OMRON Corp., Yasu, Japan
Abstract :
We studied the influences of RIE process conditions for the thick dielectric films on the counter doped resistor layer, and found that only CHF3/Ar condition causes the decrease of the resistance. The optimization of CHF3 partial pressure enabled to reduce nonuniformiy of the resistance. We considered that “hydrogen concentration effect” caused the decrease of the resistance and confirmed the mechanism by SIMS analysis and TCAD simulation. The optimal RIE process was applied to MEMS pressure sensor mass production, and product yield was improved.
Keywords :
microsensors; piezoresistive devices; pressure sensors; secondary ion mass spectra; sputter etching; technology CAD (electronics); thick film resistors; MEMS pressure sensor mass production; RIE process; SIMS analysis; TCAD simulation; counter doped resistor layer; hydrogen concentration effect; piezo resistor; product yield; thick dielectric films; Crystals; Etching; Hydrogen; Micromechanical devices; Plasmas; Radio frequency; Silicon;
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4577-0392-8
Electronic_ISBN :
1523-553X
