DocumentCode :
1753986
Title :
Direct correlation between electrical failure and haze signals of DF (dark field) inspectors
Author :
Fujiyoshi, Katsuhiro ; Isaka, Tomoko ; Sasahara, Kyoko ; Nagaishi, Hiroshi ; Sakurai, Koichi
Author_Institution :
Renesas Electron. Corp., Ibaraki, China
fYear :
2010
fDate :
18-20 Oct. 2010
Firstpage :
1
Lastpage :
4
Abstract :
A correlation between “haze” signals from DF (dark field) inspectors and electrical failure rates is reported. We provide experimental data that reflect a direct correlation between haze-signal values and the rate of electrically failing bits in advanced SRAM. This result is considered in the light of experiments including haze signals produced by wafers on which polystyrene latex (PSL) particles had been scattered. We also introduce a practical application of haze mapping to the QC of incoming materials based on the identified correlations.
Keywords :
SRAM chips; failure analysis; inspection; semiconductor industry; PSL particles; SRAM; dark field inspectors; electrical failure; haze signals; polystyrene latex; wafers; Correlation; Metals; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location :
Tokyo
ISSN :
1523-553X
Print_ISBN :
978-1-4577-0392-8
Electronic_ISBN :
1523-553X
Type :
conf
Filename :
5750255
Link To Document :
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