DocumentCode :
1753990
Title :
Enabling 18nm-particle detection on Si surfaces by conventional laser scattering
Author :
Tamura, Akitake ; Kawamura, Shigeru ; Saito, Misako
Author_Institution :
Tokyo Electron Ltd., Nirasaki, Japan
fYear :
2010
fDate :
18-20 Oct. 2010
Firstpage :
1
Lastpage :
4
Abstract :
According to ITRS2009, the detection of 18nm particles is required for 2010, but the latest laser scattering wafer inspection system is not capable of detecting particles smaller than 28 nm. Therefore, it is necessary to establish the method of detecting smaller particles. We developed a method to detect particles that are below the detection limit of the particle detection system by depositing SiO2 film on the particles and thus enhancing light scattering intensity. By using this method, we could detect 18nm particles even with conventional particle detection systems with the minimum detection size of 38nm by optimizing film deposition conditions.
Keywords :
elemental semiconductors; inspection; light scattering; measurement by laser beam; particle detectors; semiconductor technology; silicon; ITRS2009; Si; SiO2; detection size; film deposition; laser scattering; light scattering intensity; particle detection system; size 18 nm; size 38 nm; wafer inspection system; Atmospheric measurements; Particle measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location :
Tokyo
ISSN :
1523-553X
Print_ISBN :
978-1-4577-0392-8
Electronic_ISBN :
1523-553X
Type :
conf
Filename :
5750260
Link To Document :
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