DocumentCode :
1754183
Title :
Application of the SLID-ICV interconnection technology for the ATLAS pixel upgrade at SLHC
Author :
Andricek, L. ; Beimforde, M. ; Klumpp, A. ; Macchiolo, A. ; Merkel, K.-R. ; Moser, H.-G. ; Nisius, R. ; Richter, R.H. ; Weber, J. ; Weigell, P. ; Wieland, R.
Author_Institution :
Max-Planck-Inst. fur Phys., München, Germany
fYear :
2010
fDate :
16-18 Nov. 2010
Firstpage :
1
Lastpage :
4
Abstract :
The presented R&D activity is focused on the development of a new detector for the upgrade of the ATLAS pixel system at SLHC at CERN, Geneva, employing thin pixel sensors together with a novel vertical integration technology. It consists of the Solid-Liquid-InterDiffusion (SLID) interconnection, which is an alternative to the standard solder bump-bonding, and Inter Chip Vias (ICV) for routing the signal vertically through the readout chips. The SLID interconnection is characterized by a very thin eutectic Cu-Sn alloy, achieved through the deposition of 5 μm of Cu on both sides, and 3 μm of Sn on one side only. The thin pixels are connected by the SLID process to the read out ASICs in the “chip to wafer” approach using tested known good dies. The inter chip vias are placed in the r/o chips before the SLID process in the “via last” approach. This approach gives the highest flexibility for the choice of the sensor and ASIC technology. The best possible sensors can be produced in a highly specialized technology on a dedicated process line and then in subsequent post-processing bonded to r/o ASICs coming from a standard CMOS line.
Keywords :
application specific integrated circuits; integrated circuit interconnections; ASIC technology; ATLAS pixel system; ATLAS pixel upgrade; SLHC; SLID-ICV interconnection technology; inter chip vias; solid-liquid-interdiffusion interconnection; standard CMOS line; standard solder bump-bonding; vertical integration technology; Application specific integrated circuits; Bonding; Detectors; Metals; Pixel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
3D Systems Integration Conference (3DIC), 2010 IEEE International
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0526-7
Type :
conf
DOI :
10.1109/3DIC.2010.5751439
Filename :
5751439
Link To Document :
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