Title :
A novel concept for ultra-low capacitance via-last TSV
Author :
Civale, Y. ; Gonzalez, M. ; Tezcan, D.S. ; Travaly, Y. ; Soussan, P. ; Beyne, E.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
In this study, we report a new concept of through silicon via for 3D applications requiring ultra-low coupling capacitance. The challenges linked to the integration of such structure, as well as preliminary results on stress level and distribution in the TSV are addressed in details below.
Keywords :
joining processes; three-dimensional integrated circuits; TSV technology; through silicon via technology; ultra-low coupling capacitance; Capacitance; Copper; Dielectrics; Silicon; Stress; Three dimensional displays; Through-silicon vias; 3D interconnect; Low coupling capacitance; Through-Silicon Via; via-last;
Conference_Titel :
3D Systems Integration Conference (3DIC), 2010 IEEE International
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0526-7
DOI :
10.1109/3DIC.2010.5751482
