• DocumentCode
    1754429
  • Title

    Effects of Proton and X-ray Irradiation on Graphene Field-Effect Transistors with Thin Gate Dielectrics

  • Author

    Francis, S. Ashley ; Petrosky, James C. ; McClory, John W. ; Cress, Cory D.

  • Author_Institution
    Dept. of Eng. Phys., Francis is with the Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
  • Volume
    61
  • Issue
    6
  • fYear
    2014
  • fDate
    Dec. 2014
  • Firstpage
    3010
  • Lastpage
    3017
  • Keywords
    X-ray effects; annealing; field effect transistors; graphene; hole mobility; hole traps; proton effects; C; X-ray irradiation; annealing; charge migration; charge pumping current; degradation; drain current; drain current-gate voltage measurements; gas molecules; graphene field-effect transistors; hole mobility; hole trapping; oxygen-related defect; oxygen-related p-type doping; proton irradiation; thin gate dielectrics; water molecules; Annealing; Charge carrier processes; Graphene; Hysteresis; Protons; Radiation effects; Transistors; Charge pumping; graphene; hysteresis; oxide traps; radiation effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2014.2364780
  • Filename
    6957617
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1754429