1754429

Effects of Proton and X-ray Irradiation on Graphene Field-Effect Transistors with Thin Gate Dielectrics

Francis, S. Ashley ; Petrosky, James C. ; McClory, John W. ; Cress, Cory D.

Dept. of Eng. Phys., Francis is with the Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA

61

6

2014

Dec. 2014

3010

3017

X-ray effects; annealing; field effect transistors; graphene; hole mobility; hole traps; proton effects; C; X-ray irradiation; annealing; charge migration; charge pumping current; degradation; drain current; drain current-gate voltage measurements; gas molecules; graphene field-effect transistors; hole mobility; hole trapping; oxygen-related defect; oxygen-related p-type doping; proton irradiation; thin gate dielectrics; water molecules; Annealing; Charge carrier processes; Graphene; Hysteresis; Protons; Radiation effects; Transistors; Charge pumping; graphene; hysteresis; oxide traps; radiation effects;

English

Nuclear Science, IEEE Transactions on

ieee

0018-9499

jour

10.1109/TNS.2014.2364780

6957617