DocumentCode :
1754442
Title :
Kesterite Successes, Ongoing Work, and Challenges: A Perspective From Vacuum Deposition
Author :
Repins, I.L. ; Romero, M.J. ; Li, Jian V. ; Su-Huai Wei ; Kuciauskas, Darius ; Chun-Sheng Jiang ; Beall, C. ; DeHart, Clay ; Mann, Janek ; Wan-Ching Hsu ; Teeter, Glenn ; Goodrich, Al ; Noufi, Rommel
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Volume :
3
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
439
Lastpage :
445
Abstract :
Recent years have seen dramatic improvements in the performance of kesterite devices. The existence of devices of comparable performance, made by a number of different techniques, provides some new perspective on what characteristics are likely fundamental to the material. Here, we review progress in kesterite device fabrication, aspects of the film characteristics that have yet to be understood, and challenges in device development that remain for kesterites to contribute significantly to photovoltaic manufacturing. Performance goals, as well as characteristics of midgap defect density, free carrier density, surfaces, grain boundaries, grain-to-grain uniformity, and bandgap alloying are discussed.
Keywords :
alloying; carrier density; copper compounds; energy gap; grain boundaries; semiconductor growth; semiconductor thin films; surface photovoltage; ternary semiconductors; thin film devices; tin compounds; vacuum deposition; zinc compounds; Cu2ZnSnS4; band gap alloying; device development; film characteristics; free carrier density; grain boundaries; grain-to-grain uniformity; kesterite device fabrication; midgap defect density; photovoltaic manufacturing; vacuum deposition; Grain boundaries; Performance evaluation; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Temperature measurement; Cu$_{2}$ZnSnS$_{4}$ (CZTS); earth; kesterite; photovoltaic; thin film;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2012.2215842
Filename :
6307808
Link To Document :
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