DocumentCode
1754460
Title
From Memory Device Cross Section to Data Integrity Figures of Space Mass Memories
Author
Walter, Dennis ; Herrmann, Markus ; Grurmann, Kai ; Gliem, F.
Author_Institution
Inst. f. Datentechnik, Tech. Univ. Braunschweig, Braunschweig, Germany
Volume
61
Issue
5
fYear
2014
fDate
Oct. 2014
Firstpage
2547
Lastpage
2554
Abstract
The influence of SEU and SEFI events in 4-Gbit DDR3 SDRAM on the data integrity of an example mass memory with a capacity of 4-Tbit and Single Symbol Error Correcting Reed-Solomon Code is investigated.
Keywords
DRAM chips; 4-Gbit DDR3 SDRAM; 4-Tbit capacity; SEFI event; SEU event; Single Symbol Error Correcting Reed-Solomon Code; data integrity; memory device cross section; space mass memories; Annealing; Error correction; Error probability; SDRAM; Single event upsets; Space vehicles; Bit error probability; DDR3 SDRAM; Reed–Solomon; SEE; SEFI; SEU; error correction; mass memory; mean time to first uncorrectable error;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2014.2348798
Filename
6912021
Link To Document