Title :
Fast 3-D Electrothermal Device/Circuit Simulation of Power Superjunction MOSFET Based on SDevice and HSPICE Interaction
Author :
Chvala, Ales ; Donoval, Daniel ; Marek, Jiri ; Pribytny, Patrik ; Molnar, Miklos ; Mikolasek, M.
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia
Abstract :
Automated interaction of SDevice and HSPICE for fast 3-D electrothermal simulation based on the relaxation method is designed. The results are compared with device finite element model simulation and a direct method with an equivalent thermal 3-D RC network. The features and limitations of the methods are analyzed and presented. The designed electrothermal simulation based on the relaxation method is developed for Synopsys TCAD Sentaurus environment for decreasing the simulation time for complex 3-D devices. A power vertical superjunction MOSFET under an unclamped inductive switching test of device robustness is used to perform validation of the designed electrothermal simulation.
Keywords :
SPICE; power MOSFET; technology CAD (electronics); HSPICE; SDevice; Synopsys TCAD Sentaurus environment; equivalent thermal 3-D RC network; fast 3-D electrothermal device/circuit simulation; power superjunction MOSFET; relaxation method; unclamped inductive switching test; Finite element analysis; Integrated circuit modeling; MOSFET; Relaxation methods; Semiconductor device modeling; Semiconductor process modeling; Solid modeling; 3-D electrothermal simulation; HSPICE; SDevice; superjunction MOSFET; unclamped inductive switching (UIS) test;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2305848
