InGaAs/GaAs Multiple-Quantum-Well Semiconductor Disk Laser Pumped With Electron Beam

We report an electron-beam-pumped vertical-external-cavity surface-emitting laser [or semiconductor disk laser (SDL)] on the basis of InGaAs/GaAs multiple-quantum-well structure grown monolithically by molecular-beam epitaxy together with high-reflective AlGaAs/GaAs distributed Bragg reflector. The auxiliary mirror of the optical cavity is spherical with 20- or 30-mm radius of curvature and a transparency of 1.5%. The SDL is operated in a pulse mode at the room temperature and in a continuous wave (CW) mode at the temperature of liquid nitrogen. A pulse peak power of 9 W is achieved at wavelength of λ = 1035 nm under pumping by electrons with energy of 42 keV. The full-width at half-maximum pulse duration is 150-320 ns. Maximum laser efficiency of about 15% is achieved at the electron energy of 22-23 keV. The full-beam divergence is below 10 mrad. At the CW mode, we obtained 23 mW of average output power near the wavelength λ = 1026 nm.