Title :
High-Power RF MEMS Switched Capacitors Using a Thick Metal Process
Author :
Zareie, H. ; Rebeiz, Gabriel M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA
Abstract :
This paper presents the design and characterization of a high-power RF microelectromechanical systems switched capacitor. The switch is based on a 4-μm-thick metal plate and four symmetrical springs. The design has low sensitivity to residual stress and stress gradients. -parameter measurements result in Cu = 0.01 pF, Cd = 0.63 pF (Cr = 6.3), a power handling >;10 W using hot switching conditions, and a switching time of ~20 μs. The pull-down voltage ( -55 V) and release voltage (Vr = 25-30 V) are stable to +/-4 V over 25°C-125°C. The design can be arrayed for -bit switched-capacitor networks. Applications areas are in high-power phase shifters and tunable filters.
Keywords :
internal stresses; microswitches; phase shifters; power capacitors; radiofrequency filters; springs (mechanical); switched capacitor filters; S-parameter measurement; capacitance 0.01 pF; capacitance 0.63 pF; high-power RF MEMS switched capacitor network; high-power phase shifter; hot switching condition; microelectromechanical system; power handling; pull-down voltage; residual stress gradient; size 4 mum; symmetrical spring; temperature 25 degC to 125 degC; thick metal plate; thick metal process; tunable filter; voltage -4 V; voltage 4 V; voltage 50 V to 55 V; Capacitance; Micromechanical devices; Radio frequency; Residual stresses; Springs; Switches; High power; RF microelectromechanical systems (MEMS); switches; tunable circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2012.2226744
