DocumentCode :
1755033
Title :
A High Fill-Factor Annular Array of High Frequency Piezoelectric Micromachined Ultrasonic Transducers
Author :
Yipeng Lu ; Heidari, Amir ; Horsley, David A.
Author_Institution :
Berkeley Sensor & Actuator Center, Univ. of California at Davis, Davis, CA, USA
Volume :
24
Issue :
4
fYear :
2015
fDate :
Aug. 2015
Firstpage :
904
Lastpage :
913
Abstract :
This paper presents a 1.2-mm diameter high fill-factor array of 1261 piezoelectric micromachined ultrasonic transducers (PMUTs) operating at 18.6 MHz in fluid for intravascular ultrasound imaging. At 1061 transducers/mm2, the PMUT array has a 10-20 times higher density than previous PMUT arrays realized to date. Aluminum nitride (AlN)-based PMUTs described in this paper are fabricated using a process compatible with the fabrication of inertial sensors, radio frequency (RF) resonators, and CMOS integrated circuits. The PMUTs are released using a front-side sacrificial etch through etching holes that are subsequently sealed by a thin layer of parylene. Finite element method and analytical results, including resonant frequency, pressure sensitivity, output acoustic pressure, and directivity are given to guide the PMUT design effectively, and are shown to match well with measurement results. Due to the PMUTs thin membrane (750-nm AlN/800-nm SiO2) and small diameter, a single 25-μm PMUT has approximately omnidirectional directivity and no near-field zone with irregular pressure pattern. PMUTs are characterized in both the frequency and time domains. Measurement results show a large displacement response of 2.5 nm/V at resonance and good frequency matching in air, high center frequency of 18.6 MHz and wide bandwidth of 4.9 MHz, when immersed in fluid. Phased array simulations based on measured PMUT parameters show a tightly focused high-output pressure acoustic beam.
Keywords :
III-V semiconductors; aluminium compounds; biomedical transducers; biomedical ultrasonics; micromachining; microsensors; piezoelectric transducers; ultrasonic imaging; ultrasonic transducer arrays; wide band gap semiconductors; AlN-SiO2; CMOS integrated circuits; bandwidth 4.9 MHz; frequency 18.6 MHz; front side sacrificial etch; high fill factor annular array; high frequency ultrasonic transducers; inertial sensor fabrication; intravascular ultrasound imaging; phased array; piezoelectric micromachined ultrasonic transducers; radio frequency resonators; size 1.2 mm; size 25 mum; Acoustics; Arrays; III-V semiconductor materials; Resonant frequency; Sensitivity; Stress; Transducers; Aluminum nitride (AlN); micromachined ultrasonic transducer (MUT); piezoelectric; piezoelectric MUT (PMUT); transducer; ultrasonic;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2014.2358991
Filename :
6912934
Link To Document :
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