Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs

In this paper, for the first time, we study the impact of self-heating on the statistical variability of bulk and Silicon-on-insulator FinFETs designed to meet the requirements of the 14/16-nm technology node. The simulations are performed using the Gold Standard Simulations atomistic simulator GARAND using an enhanced electrothermal model that considers the impact of the fin geometry on the thermal conductivity. In the simulations, we have compared the statistical variability obtained from full-scale electrothermal simulations with the variability at uniform room temperature and at the maximum or average temperatures obtained in the electrothermal simulations. The combined effects of line edge roughness and metal gate granularity are considered. The distributions and the correlations between key figures of merit, including the threshold voltage, ON-current, subthreshold slope, and leakage current are presented and analyzed.