Fabrication and Electrical Characterization of Fully CMOS-Compatible Si Single-Electron Devices

Author

Koppinen, P.J. ; Stewart, M.D., Jr. ; Zimmerman, Neil M.

Author_Institution

Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

Volume

60

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

78

Lastpage

83

Abstract

We present electrical data of silicon single-electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30mK and a charge offset drift of 0.01e over eight days. In addition, the devices exhibit robust transistor characteristics, including uniformity within about ±0.25 V in the threshold voltage, gate resistances greater than 10 GΩ, and immunity to dielectric breakdown in electric fields as high as 4 MV/cm. These results highlight the benefits in device performance of a silicon-foundry-compatible process for single-electron device fabrication.

Keywords

CMOS integrated circuits; elemental semiconductors; silicon; single electron devices; CMOS protocols; CMOS techniques; Coulomb diamonds; Si; Si single-electron devices; charge offset drift; electrical characterization; electrical data; fully CMOS-compatible devices; gate resistances; robust transistor; silicon-foundry-compatible process; temperature 30 mK; threshold voltage; CMOS integrated circuits; Fabrication; Logic gates; Oscillators; Silicon; Temperature measurement; Voltage measurement; Complementary metal–oxide–semiconductor (CMOS); Coulomb blockade; quantum dot; silicon-on-insulator (SOI); single-electron transistor; single-electron tunneling (SET);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2227322

Filename

6377278