DocumentCode
1755202
Title
Schottky Biristor: A Metal-Semiconductor–Metal Bistable Resistor
Author
Kumar, Mamidala Jagadesh ; Maram, Maheedhar ; Varma, P. Pradeep
Author_Institution
Dept. of Electr. Eng., IIT Delhi, Delhi, India
Volume
62
Issue
7
fYear
2015
fDate
42186
Firstpage
2360
Lastpage
2363
Abstract
In this brief, we report a novel metal-semiconductor-metal-based bistable resistor, called the Schottky biristor, whose performance is superior to the existing bipolar junction transistor-based biristors. The proposed device can be realized by joining symmetrical Schottky contacts back to back. Apart from being free of the thermal budgets involved in the fabrication of p-n junctions in a biristor, the Schottky biristor also has much lower latch voltages (latch-up voltage of 1.62 V and latch-down voltage of 1.18 V) and a reasonable latch window (0.44 V) as demonstrated by our simulation results.
Keywords
Schottky barriers; bipolar transistors; metal-semiconductor-metal structures; p-n junctions; resistors; Schottky biristor; Schottky contact; bipolar junction transistor-based biristor; latch voltage; metal-semiconductor-metal bistable resistor; p-n junction; thermal budget; voltage 0.44 V; voltage 1.18 V; voltage 1.62 V; Impact ionization; Latches; Metals; Resistors; Schottky barriers; Silicon; Bistable resistor; Schottky biristor; breakdown; impact-ionization; metal-semiconductor-metal (MSM); metal???semiconductor???metal (MSM); simulation; simulation.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2433300
Filename
7118155
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