• DocumentCode
    1755202
  • Title

    Schottky Biristor: A Metal-Semiconductor–Metal Bistable Resistor

  • Author

    Kumar, Mamidala Jagadesh ; Maram, Maheedhar ; Varma, P. Pradeep

  • Author_Institution
    Dept. of Electr. Eng., IIT Delhi, Delhi, India
  • Volume
    62
  • Issue
    7
  • fYear
    2015
  • fDate
    42186
  • Firstpage
    2360
  • Lastpage
    2363
  • Abstract
    In this brief, we report a novel metal-semiconductor-metal-based bistable resistor, called the Schottky biristor, whose performance is superior to the existing bipolar junction transistor-based biristors. The proposed device can be realized by joining symmetrical Schottky contacts back to back. Apart from being free of the thermal budgets involved in the fabrication of p-n junctions in a biristor, the Schottky biristor also has much lower latch voltages (latch-up voltage of 1.62 V and latch-down voltage of 1.18 V) and a reasonable latch window (0.44 V) as demonstrated by our simulation results.
  • Keywords
    Schottky barriers; bipolar transistors; metal-semiconductor-metal structures; p-n junctions; resistors; Schottky biristor; Schottky contact; bipolar junction transistor-based biristor; latch voltage; metal-semiconductor-metal bistable resistor; p-n junction; thermal budget; voltage 0.44 V; voltage 1.18 V; voltage 1.62 V; Impact ionization; Latches; Metals; Resistors; Schottky barriers; Silicon; Bistable resistor; Schottky biristor; breakdown; impact-ionization; metal-semiconductor-metal (MSM); metal???semiconductor???metal (MSM); simulation; simulation.;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2433300
  • Filename
    7118155