Title :
Development of Ultrahigh-Voltage SiC Devices
Author :
Fukuda, Kenji ; Okamoto, Dai ; Okamoto, Mitsuo ; Deguchi, Tadayoshi ; Mizushima, Tomonori ; Takenaka, Kana ; Fujisawa, Hiroyuki ; Harada, Shingo ; Tanaka, Yuichi ; Yonezawa, Yoshiyuki ; Kato, Toshihiko ; Katakami, Shuji ; Arai, Manabu ; Takei, Manabu ; Ma
Author_Institution :
Adv. Power Electron. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
Ultrahigh-voltage silicon carbide (SiC) devices [p-i-n diodes and insulated-gate bipolar transistors (IGBTs)] and switching test have been investigated. As a result, we have succeeded in developing a 13-kV p-i-n diode, 15-kV p-channel IGBT, and 16-kV flip-type n-channel implantation and epitaxial IGBT with a low differential specific on-resistance (Rdiff,on). It was revealed that a power module fabricated using a nanotech resin, Si3N4 ceramic substrate, and W base plate was suitable for ultrahigh voltage and high temperature. A switching test was carried out using a clamped inductive load circuit, which indicated that the energy loss of a circuit with ultrahigh-voltage SiC devices is lower than that of Si devices.
Keywords :
insulated gate bipolar transistors; p-i-n diodes; power semiconductor devices; silicon compounds; wide band gap semiconductors; clamped inductive load circuit; differential specific on-resistance; epitaxial IGBT; flip-type n-channel implantation; insulated-gate bipolar transistors; nanotech resin; p-channel IGBT; p-i-n diodes; power module; switching test; ultrahigh-voltage devices; voltage 13 kV; voltage 15 kV; voltage 16 kV; Annealing; Insulated gate bipolar transistors; Logic gates; Multichip modules; P-i-n diodes; Silicon carbide; Substrates; n-type insulated-gate bipolar transistors (IGBTs); p-i-n; p-type IGBTs; package technology; silicon carbide (SiC); switching test; ultrahigh voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2357812
