DocumentCode :
1755317
Title :
Direct Copper Bonding for Power Interconnects: Design, Manufacturing, and Test
Author :
Mouawad, Bassem ; thollin, Benoit ; Buttay, Cyril ; Dupont, Laurent ; Bley, Vincent ; Fabregue, Damien ; Soueidan, Maher ; Schlegel, Benoit ; Pezard, Julien ; Crebier, Jean-Christophe
Author_Institution :
Power Electron. Machines & Control Group, Univ. of Nottingham, Nottingham, UK
Volume :
5
Issue :
1
fYear :
2015
fDate :
Jan. 2015
Firstpage :
143
Lastpage :
150
Abstract :
3-D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a 3-D technology that uses an innovative assembly method (direct copper-to-copper bonding). The concept and manufacturing process of this technology is described in detail. An accurate electrical characterization is then performed to compare its performance with that of the classical planar structures.
Keywords :
bonding processes; copper; interconnections; power semiconductor devices; semiconductor device manufacture; semiconductor device metallisation; semiconductor device packaging; semiconductor device testing; thermal management (packaging); 3D power module structures; 3D technology; Cu-Cu; assembly method; direct copper-to-copper bonding; manufacturing process; parasitic inductances; planar technology; power interconnects; Assembly; Bonding; Copper; Heating; Packaging; Substrates; 3-D packaging; power electronics; semiconductor device packaging; spark plasma sintering (SPS); spark plasma sintering (SPS).;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2014.2376882
Filename :
6983597
Link To Document :
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