Direct Copper Bonding for Power Interconnects: Design, Manufacturing, and Test

Author

Mouawad, Bassem ; thollin, Benoit ; Buttay, Cyril ; Dupont, Laurent ; Bley, Vincent ; Fabregue, Damien ; Soueidan, Maher ; Schlegel, Benoit ; Pezard, Julien ; Crebier, Jean-Christophe

Author_Institution

Power Electron. Machines & Control Group, Univ. of Nottingham, Nottingham, UK

Volume

5

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

143

Lastpage

150

Abstract

3-D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a 3-D technology that uses an innovative assembly method (direct copper-to-copper bonding). The concept and manufacturing process of this technology is described in detail. An accurate electrical characterization is then performed to compare its performance with that of the classical planar structures.

Keywords

bonding processes; copper; interconnections; power semiconductor devices; semiconductor device manufacture; semiconductor device metallisation; semiconductor device packaging; semiconductor device testing; thermal management (packaging); 3D power module structures; 3D technology; Cu-Cu; assembly method; direct copper-to-copper bonding; manufacturing process; parasitic inductances; planar technology; power interconnects; Assembly; Bonding; Copper; Heating; Packaging; Substrates; 3-D packaging; power electronics; semiconductor device packaging; spark plasma sintering (SPS); spark plasma sintering (SPS).;

fLanguage

English

Journal_Title

Components, Packaging and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-3950

Type

jour

DOI

10.1109/TCPMT.2014.2376882

Filename

6983597