Abstract :
Researchers at the Naval Research Laboratory in Washington, USA, have implanted Mg in GaN and employed a novel high-temperature annealing technique that has realised electrical activation of implanted material for the first time without co-implantation, and demonstrated an increase in the activation ratios for in situ Mg-doped GaN from around 1% to a record 10%.
Keywords :
III-V semiconductors; annealing; gallium compounds; high-temperature techniques; ion implantation; magnesium; power semiconductor devices; semiconductor doping; wide band gap semiconductors; GaN:Mg; Mg-doped GaN; activation ratio; high-temperature annealing technique; high-voltage GaN-based power devices; implanted material electrical activation; p-type doping;
