DocumentCode :
1755394
Title :
Impedance Measurement and Characterization of Ag-Ge30Se70-Based Programmable Metallization Cells
Author :
Mahalanabis, Debayan ; Gonzalez-Velo, Y. ; Barnaby, H.J. ; Kozicki, M.N. ; Dandamudi, P. ; Vrudhula, Sarma
Author_Institution :
Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
Volume :
61
Issue :
11
fYear :
2014
fDate :
Nov. 2014
Firstpage :
3723
Lastpage :
3730
Abstract :
Chalcogenide glass-based programmable metallization cell (PMC) devices undergo Ag+-ion transport and controlled resistance change under the application of electrical bias. In this paper, photo-doped PMC devices are characterized with impedance spectroscopy. Photo doping is an important step in PMC fabrication as it introduces the mobile Ag into the electrolyte and, therefore, has a significant effect on device characteristics. Data obtained from measurements on devices with different areas in both their high resistance state (HRS) and low resistance state (LRS) are used to parameterize equivalent circuit models. The models elucidate the differences in the HRS and LRS electrical properties.
Keywords :
chalcogenide glasses; electrolytes; germanium compounds; integrated circuit measurement; integrated circuit metallisation; random-access storage; silver compounds; Ag-Ge30Se70; Ag+-ion transport; HRS electrical properties; LRS electrical properties; ReRAM; chalcogenide glass-based programmable metallization cell devices; controlled resistance change; electrical bias; electrolyte; equivalent circuit models; high resistance state; impedance characterization; impedance measurement; impedance spectroscopy; low resistance state; photo-doped PMC devices; photodoping; resistive switching random access memory; Anodes; Capacitance; Cathodes; Impedance; Impedance measurement; Resistance; Switches; Chalcogenide (ChG); electrochemical memory cell; electrochemical metallization memory (ECM); impedance spectra; nanoionic memory; photo doping; programmable metallization cells (PMCs); resistive switching random access memory (ReRAM); solid-state electrolyte;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2358573
Filename :
6912973
Link To Document :
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