DocumentCode
1755407
Title
Design and Characterization of 
-Band (220–325 
GHz) Amplifiers in a 250-nm InP DHBT Te
Author
Eriksson, Klas ; Gunnarsson, Sten E. ; Vassilev, Vessen ; Zirath, Herbert
Author_Institution
Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden
Volume
4
Issue
1
fYear
2014
fDate
Jan. 2014
Firstpage
56
Lastpage
64
Abstract
Design and characterization of InP DHBT amplifiers in common-emitter and common-base topologies are presented. Both one-stage and multistage circuits are demonstrated. For one of the amplifiers, a peak gain of 24 dB at 255 GHz is measured, which is among the highest reported gains for HBT amplifiers above 200 GHz, and more than 10 dB gain at 210-315 GHz. The noise figure of this amplifier is measured on-wafer at 240-295 GHz, and it demonstrates a minimum noise figure of 10.4 dB at 265 GHz, which is the lowest reported noise figure for HBT amplifiers above 200 GHz.
Keywords
III-V semiconductors; MMIC amplifiers; heterojunction bipolar transistors; indium compounds; topology; DHBT technology; H-band amplifiers; HBT amplifiers; InP; common-base topologies; common-emitter topologies; double heterojunction bipolar transistor; frequency 220 GHz to 325 GHz; multistage circuits; noise figure; one-stage circuits; DH-HEMTs; Frequency measurement; Gain; Indium phosphide; Inductance; Noise; Power generation; $H$
fLanguage
English
Journal_Title
Terahertz Science and Technology, IEEE Transactions on
Publisher
ieee
ISSN
2156-342X
Type
jour
DOI
10.1109/TTHZ.2013.2275900
Filename
6583229
Link To Document