Title :
Effect of Bandgap Narrowing on Performance of Modern Power Devices
Author :
Camuso, G. ; Napoli, E. ; Pathirana, V. ; Udugampola, N. ; Hsieh, Alice Pei-Shan ; Trajkovic, T. ; Udrea, F.
Author_Institution :
Dept. of Eng., Cambridge Univ., Cambridge, UK
Abstract :
The effect of the bandgap narrowing (BGN) on performance of power devices is investigated in detail in this paper. The analysis reveals that the change in the energy band structure caused by BGN can strongly affect the conductivity modulation of the bipolar devices resulting in a completely different performance. This is due to the modified injection efficiency under high-level injection conditions. Using a comprehensive analysis of the injection efficiency in a p-n junction, an analytical model for this phenomenon is developed. BGN model tuning has been proved to be essential in accurately predicting the performance of a lateral insulated-gate bipolar transistor (IGBT). Other devices such as p-i-n diodes or punch-through IGBTs are significantly affected by the BGN, while others, such as field-stop IGBTs or power MOSFETs, are only marginally affected.
Keywords :
energy gap; insulated gate bipolar transistors; power semiconductor devices; semiconductor device models; BGN model tuning; bandgap narrowing; bipolar devices; conductivity modulation; energy band structure; field-stop IGBT; high-level injection conditions; injection efficiency; lateral insulated-gate bipolar transistor; modern power devices; p-i-n diodes; p-n junction; power MOSFET; punch-through IGBT; Analytical models; Current density; Doping; Insulated gate bipolar transistors; MOSFET; Performance evaluation; Semiconductor process modeling; Bandgap narrowing; high voltage; insulated-gate bipolar transistor (IGBT); power devices;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2286528
