Effect of Bandgap Narrowing on Performance of Modern Power Devices

Author

Camuso, G. ; Napoli, E. ; Pathirana, V. ; Udugampola, N. ; Hsieh, Alice Pei-Shan ; Trajkovic, T. ; Udrea, F.

Author_Institution

Dept. of Eng., Cambridge Univ., Cambridge, UK

Volume

60

Issue

12

fYear

2013

fDate

Dec. 2013

Firstpage

4185

Lastpage

4190

Abstract

The effect of the bandgap narrowing (BGN) on performance of power devices is investigated in detail in this paper. The analysis reveals that the change in the energy band structure caused by BGN can strongly affect the conductivity modulation of the bipolar devices resulting in a completely different performance. This is due to the modified injection efficiency under high-level injection conditions. Using a comprehensive analysis of the injection efficiency in a p-n junction, an analytical model for this phenomenon is developed. BGN model tuning has been proved to be essential in accurately predicting the performance of a lateral insulated-gate bipolar transistor (IGBT). Other devices such as p-i-n diodes or punch-through IGBTs are significantly affected by the BGN, while others, such as field-stop IGBTs or power MOSFETs, are only marginally affected.

Keywords

energy gap; insulated gate bipolar transistors; power semiconductor devices; semiconductor device models; BGN model tuning; bandgap narrowing; bipolar devices; conductivity modulation; energy band structure; field-stop IGBT; high-level injection conditions; injection efficiency; lateral insulated-gate bipolar transistor; modern power devices; p-i-n diodes; p-n junction; power MOSFET; punch-through IGBT; Analytical models; Current density; Doping; Insulated gate bipolar transistors; MOSFET; Performance evaluation; Semiconductor process modeling; Bandgap narrowing; high voltage; insulated-gate bipolar transistor (IGBT); power devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2286528

Filename

6661400