Title :
Determination of Diffusion Length for the Finite Thickness Normal-Collector Configuration Using EBIC Technique
Author :
Chee Chin Tan ; Ong, Vincent K. S. ; Radhakrishnan, Krishnaja ; Sunar, Siti Hairunnisah Bte
Author_Institution :
NOVITAS-Nanoelectron. Centre of Excellence, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
This paper presents a study of the extraction of the diffusion length in the normal-collector configuration with finite thickness with the use of the electron beam-induced current (EBIC) line scan. The EBIC data used were obtained from a commercially available device simulator. It was found that the surface recombination at the free surfaces affects the EBIC data, and therefore also affects the value of the extracted diffusion length and the linearization coefficient α. The effects of the surface recombination at the free surfaces and the sample thickness on the diffusion length extracted and the linearization coefficient α were researched and are discussed in this paper. Furthermore, the conditions at the free surfaces for a direct and accurate extraction of the bulk diffusion length at different sample thicknesses are suggested.
Keywords :
EBIC; diffusion; linearisation techniques; semiconductor device measurement; surface recombination; EBIC data; EBIC line scan; EBIC technique; bulk diffusion length; device simulator; electron beam-induced current; finite thickness; free surfaces; linearization coefficient; normal-collector configuration; semiconductor device measurement; surface recombination; Equations; Length measurement; Mathematical model; P-n junctions; Radiative recombination; Semiconductor device measurement; Surface treatment; Carrier processes; electron microscopy; semiconductor device measurement; semiconductor materials; simulation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2277584