Title :
Simple scheme to increase hold voltage for silicon-controlled rectifier
Author :
Hung, Cheng-Yuan ; Kao, Tzu-Cheng ; Lee, Joun-Ho ; Gong, Jianya ; Huang, Tiao-Yuan ; Su, Hung-Der ; Chang, Kuo-Chu ; Huang, Chih-Fang ; Lo, Kuo-Hsuan
Author_Institution :
Richtek Inc., Hsinchu, Taiwan
Abstract :
A simple scheme is proposed to increase the hold voltage and not change the original trigger voltage of a silicon-controlled rectifier (SCR) to enhance its latch-up immunity without changing the device dimensions. It is found that using the lightly doped P-diffusion instead of the highly doped P+ diffusion as the P emitter of the anode can increase the hold voltage of an SCR.
Keywords :
thyristors; SCR; highly doped P+ diffusion; hold voltage; latch-up immunity enhancement; lightly doped P-diffusion; silicon-controlled rectifier; trigger voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.1853
