Title :
GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric
Author :
Mengyuan Hua ; Cheng Liu ; Shu Yang ; Shenghou Liu ; Kai Fu ; Zhihua Dong ; Yong Cai ; Baoshun Zhang ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ., Hong Kong, China
Abstract :
In this letter, silicon nitride (SiNx) film deposited at 780 °C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors. The LPCVD-SiNx exhibit improved gate dielectric performance than the plasma enhanced chemical vapor deposition-SiNx, including smaller forward and reverse gate leakage, and higher forward gate breakdown voltage.
Keywords :
III-V semiconductors; MIS devices; chemical vapour deposition; dielectric materials; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; GaN; LPCVD; SiNx; forward gate breakdown voltage; gate dielectric; gate leakage; low-pressure chemical vapor deposition; metal-insulator-semiconductor high-electron-mobility transistor; plasma enhanced chemical vapor deposition; silicon nitride film; temperature 780 C; Aluminum gallium nitride; Dielectrics; Films; Gallium nitride; Leakage currents; Logic gates; Silicon nitride; Gallium nitride; LPCVD; MIS-HEMT; gate dielectric; silicon nitride;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2409878
