Direct Laser Texturing for High-Efficiency Silicon Solar Cells

Author

Zielke, D. ; Sylla, Diogone ; Neubert, T. ; Brendel, Rolf ; Schmidt, J.

Author_Institution

Inst. for Solar Energy Res. Hamelin, Emmerthal, Germany

Volume

3

Issue

2

fYear

2013

fDate

41365

Firstpage

656

Lastpage

661

Abstract

We implement direct laser texturing (DiLaT) into small-area (2 × 2 cm ²) passivated emitter and rear solar cells (PERC). On monocrystalline float-zone silicon (FZ-Si) wafers, we achieve an independently confirmed energy conversion efficiency of 19.9% that demonstrates the applicability of DiLaT to high-efficiency solar cells. Applying our DiLaT process to block-cast multicrystalline silicon (mc-Si) wafers, we achieve short-circuit current densities J_sc up to 39.3 mA/cm² and efficiencies up to 17.9%. The reduced J_sc value of our mc-Si solar cells compared with the FZ-Si cells is shown to be predominantly due to increased recombination in the bulk and/or the rear.

Keywords

current density; elemental semiconductors; laser materials processing; passivation; short-circuit currents; silicon; solar cells; DiLaT; FZ-Si wafers; PERC; Si; block-cast multicrystalline silicon wafers; direct laser texturing; energy conversion efficiency; high-efficiency silicon solar cells; mc-Si wafers; monocrystalline float-zone silicon wafers; short-circuit current densities; small-area passivated emitter and rear solar cells; solar cells; Etching; Laser modes; Photovoltaic cells; Silicon; Surface emitting lasers; Surface texture; Laser; photovoltaic cells; silicon; surface texture;

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

jour

DOI

10.1109/JPHOTOV.2012.2228302

Filename

6378387