Inline-Characterization and Step Coverage Optimization of Deposited Dielectrics in DRAM Structures

Author

Krupinski, Michal ; Kasic, A. ; Hecht, Thomas ; Klude, M. ; Heitmann, J. ; Erben, E. ; Mikolajick, Thomas

Author_Institution

Namlab gGmbH, Dresden, Germany

Volume

26

Issue

2

fYear

2013

fDate

41395

Firstpage

253

Lastpage

259

Abstract

A combination of a common ellipsometric thickness determination from a plane surface and volume-related information gained from a Fourier transform infrared measurement enables monitoring of thin nm-scale layers in 3-D structures. This method was established to characterize dielectric layers deposited by atomic layer deposition within a capacitor structure of a 65-nm DRAM technology. The influence of precursor flow and pulse time on the overall homogeneity and step coverage of zirconium aluminum oxide was investigated. A clear correlation to the precursor amount and the geometry of the deposition tool can be shown.

Keywords

DRAM chips; Fourier transform spectra; aluminium compounds; atomic layer deposition; dielectric materials; infrared spectra; optimisation; zirconium compounds; 3D structures; DRAM structures; Fourier transform infrared measurement; ZrAlO; atomic layer deposition; capacitor structure; common ellipsometric thickness determination; deposited dielectric inline-characterization; deposited dielectric step coverage optimization; deposition tool geometry; dielectric layers; plane surface; volume-related information; zirconium aluminum oxide; Capacitors; Dielectric measurement; High K dielectric materials; Optical films; Thickness measurement; DRAM; Dielectrics; FTIR; ellipsometry; high-k; optical characterization; step coverage;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2013.2252374

Filename

6478839