DocumentCode
1756271
Title
Way of operation to improve performance for advanced split-gate resurf stepped oxide UMOSFET
Author
Ying Wang ; Hai-Fan Hu ; Zheng Dou ; Cheng-Hao Yu
Author_Institution
Coll. of Inf. & Commun. Eng., Harbin Eng. Univ., Harbin, China
Volume
7
Issue
12
fYear
2014
fDate
12 2014
Firstpage
2964
Lastpage
2968
Abstract
In this study, a way of operating a double split-gate resurf stepped oxide (DSGRSO) UMOS has been proposed. The n-drift region is divided into two parts by the double split-gate: the upper one and the lower one, which enhances the resurf active effect and binges in an electric field peak in the middle of the n-drift region, and decreases the width of split-gate trench, resulting in an increase of figure of merit (FOM). The simulation results show that the DSGRSO UMOS has improved the saturated breakdown voltage by 25.7% and FOM by 108% as compared with SGRSO UMOS at the certain aspect ratio.
Keywords
MOSFET; semiconductor device manufacture; DSGRSO UMOSFET; double split-gate resurf stepped oxide; n-drift region; resurf active effect; saturated breakdown voltage; split gate trench;
fLanguage
English
Journal_Title
Power Electronics, IET
Publisher
iet
ISSN
1755-4535
Type
jour
DOI
10.1049/iet-pel.2013.0931
Filename
6983724
Link To Document