DocumentCode :
1756438
Title :
Realization and Scaling of
Core-Shell Nanowire
 core-shell nanowire (NW) n-type, Ω-gate field-effect transistors (FETs). The devices show superior performance to the counterparts without the Si<sub>1-x</sub>Ge<sub>x</sub> shell. With a channel length (L<sub>ch</sub>) of 380 nm and a diameter of 40 nm, we demonstrate a subthreshold swing of 180 mV/dec, and an ON-current (ION) of 60 μA/μm, comparable with recent results in Ge n-type FinFETs fabricated by top-down techniques. By systematically studying the scaling properties, we identify the contribution of the channel and contact resistances to device characteristics. We conclude that I<sub>ON</sub> is not limited by the contact resistance but rather by a relatively large channel resistance, presumably associated with a high-interface trap density (D<sub>it</sub>).</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Ge-Si alloys; contact resistance; field effect transistors; nanowires; Ge-Si<sub>1-x</sub>Ge<sub>x</sub>; channel length; channel resistance; contact resistance; core-shell nanowire n-FET; device characteristics; field-effect transistors; high-interface trap density; n-type FinFET; scaling properties; size 380 nm; size 40 nm; subthreshold swing; top-down techniques; Contact resistance; Field effect transistors; Germanium; Logic gates; Resistance; Silicon; FinFETs; germanium; heterostructures; nanowires; silicon–germanium;</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fLanguage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>English</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Journal_Title : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electron Devices, IEEE Transactions on</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Publisher : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>ieee</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>ISSN : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>0018-9383</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Type : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>jour</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>DOI : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10.1109/TED.2013.2285711</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Filename : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>6662382</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Link To Document : </div><div class='valueDiv leftDirection leftAlign fullRecValueEnglish col-xs-8 col-sm-10'><a href='https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1756438' target='_blank'>https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1756438</a></div>
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