DocumentCode
1756438
Title
Realization and Scaling of 
Core-Shell Nanowire  core-shell nanowire (NW) n-type, Ω-gate field-effect transistors (FETs). The devices show superior performance to the counterparts without the Si<sub>1-x</sub>Ge<sub>x</sub> shell. With a channel length (L<sub>ch</sub>) of 380 nm and a diameter of 40 nm, we demonstrate a subthreshold swing of 180 mV/dec, and an ON-current (ION) of 60 μA/μm, comparable with recent results in Ge n-type FinFETs fabricated by top-down techniques. By systematically studying the scaling properties, we identify the contribution of the channel and contact resistances to device characteristics. We conclude that I<sub>ON</sub> is not limited by the contact resistance but rather by a relatively large channel resistance, presumably associated with a high-interface trap density (D<sub>it</sub>).</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Ge-Si alloys; contact resistance; field effect transistors; nanowires; Ge-Si<sub>1-x</sub>Ge<sub>x</sub>; channel length; channel resistance; contact resistance; core-shell nanowire n-FET; device characteristics; field-effect transistors; high-interface trap density; n-type FinFET; scaling properties; size 380 nm; size 40 nm; subthreshold swing; top-down techniques; Contact resistance; Field effect transistors; Germanium; Logic gates; Resistance; Silicon; FinFETs; germanium; heterostructures; nanowires; silicon–germanium;</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fLanguage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>English</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Journal_Title</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Electron Devices, IEEE Transactions on</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Publisher</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>ieee</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>ISSN</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>0018-9383</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Type</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>jour</h2></div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>DOI</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10.1109/TED.2013.2285711</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Filename</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>6662382</div></div>
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<div class='row g-0 align-items-center'><div class='col-12 col-md-3 fw-bold mb-2 mb-md-0'><span class='text-muted small'>Link To Document</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><a class='text-break' href='https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1756438' target='_blank' rel=)
https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1756438
https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1756438Realization and Scaling of
https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1756438