DocumentCode :
1756478
Title :
Re-Examining the Doping Effect on the Performance of Quantum Well Infrared Photodetectors
Author :
Mingrui Hao ; Shuai Zhang ; Yueheng Zhang ; Wenzhong Shen ; Schneider, H. ; Huichun Liu
Author_Institution :
Dept. of Phys. & Astron., Shanghai Jiao Tong Univ., Shanghai, China
Volume :
50
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
3
Lastpage :
6
Abstract :
This paper investigates the dependence of background limited performance (BLIP) temperature of quantum well infrared photodetectors (QWIPs) on doping density. In contrast to the generally accepted optimal doping condition EF=kBTBLIP, our theoretical prediction shows that lower doping densities should slightly increase the BLIP temperature TBLIP taking into account the temperature dependence of the Fermi energy EF, a factor neglected in the previous analyses. Numerical modeling results are used to reinterpret the reported TBLIP measurements for a series of QWIPs of typical design for 9 μm peak wavelength with different doping values. In addition, based on the same general expression for the Fermi energy, the optimized sheet doping concentration to achieve maximum detectivity is given by EF=1.37 kBT, a revision to the previous EF=2 kBT condition.
Keywords :
Fermi level; doping profiles; infrared detectors; photodetectors; quantum well devices; semiconductor doping; Fermi energy; QWIP; background limited performance temperature; doping concentration; doping effect; optimal doping condition; quantum well infrared photodetector; temperature dependence; Absorption; Approximation methods; Dark current; Detectors; Doping; Photodetectors; Temperature dependence; Quantum well infrared photodetectors (QWIPs); background limited performance (BLIP) temperature; detectivity; doping density;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2013.2290535
Filename :
6662386
Link To Document :
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