Field-Assisted Switching of Free-Layer Magnetization in Magnetic Tunnel Junctions

Author

Chen, B.J. ; Han, G.C.

Author_Institution

Data Storage Inst., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore

Volume

6

fYear

2015

fDate

2015

Firstpage

1

Lastpage

4

Abstract

We investigate the switching of electric-field (EF)-controlled magnetic tunneling junction free layer (FL) magnetization assisted by Oersted fields using micromagnetic simulations. The effects of several physical parameters, such as damping constant, magnetic anisotropy, as well as the EF efficiency and the applied Oersted fields on the switching of the FL magnetization are examined. Successful and reliable magnetization switching depends on all these parameters. The switching time is mainly determined by the time required for the magnetization of the FL to turn in-plane due to the demagnetizing field created after applying the EF.

Keywords

magnetic anisotropy; magnetic tunnelling; magnetisation reversal; micromagnetics; Oersted fields; damping constant; field assisted switching; free layer magnetization; magnetic anisotropy; magnetic tunnel junctions; magnetization switching; micromagnetic simulations; Anisotropic magnetoresistance; Damping; Electric fields; Magnetic anisotropy; Magnetic tunneling; Magnetization; Switches; General topics; Magnetization dynamics; Oersted field; electric-field-controlled; magnetic tunnel junctions; magnetization dynamics;

fLanguage

English

Journal_Title

Magnetics Letters, IEEE

Publisher

ieee

ISSN

1949-307X

Type

jour

DOI

10.1109/LMAG.2014.2381154

Filename

6985525