DocumentCode :
1756643
Title :
Estimation Carrier Concentration of Light-Emitting Diode via Electrical–Thermal Characteristics
Author :
Huan-Ting Chen ; Xiao-Fang Zhou ; Jia-Yi Cai ; Shuo Lin
Author_Institution :
Dept. of Phys. & Inf. Eng., Minnan Normal Univ., Zhangzhou, China
Volume :
62
Issue :
7
fYear :
2015
fDate :
42186
Firstpage :
2257
Lastpage :
2262
Abstract :
With the use of the capacitance, estimation techniques for the carrier concentration of the light-emitting diodes (LEDs) are introduced in this paper. The proposed model relates the carrier concentration to the forward current, the thermal resistance of the heatsink, the LED device, the device package, and the other physical parameters of the device (such as the bandgap energy, series resistance, and ideality factor), coefficients for the current, and temperature effect on the apparent capacitance altogether. It could provide a framework for analyzing LED devices. The estimation methods consist of simple procedures for electrical measurements, which are easy for LED device manufacturers and system designers to follow. The proposed model has been tested with LED devices, with reasonably good agreement between theoretical and practical results.
Keywords :
carrier density; light emitting diodes; thermal resistance; LED device; bandgap energy; carrier concentration; device package; electrical measurements; electrical-thermal characteristics; estimation techniques; heat sink; ideality factor; light-emitting diodes; series resistance; temperature effect; thermal resistance; Capacitance; Current measurement; Junctions; Light emitting diodes; Temperature measurement; Thermal resistance; Capacitance; carrier concentration; lighting system; thermal model; white light-emitting diode (LED); white light-emitting diode (LED).;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2436823
Filename :
7118689
Link To Document :
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