Title :
Predictive Modeling of Channel Potential in 3-D NAND Flash Memory
Author :
Yoon Kim ; Myounggon Kang
Author_Institution :
Memory Div., Samsung Electron. Co. Ltd., Hwaseong, South Korea
Abstract :
For the first time, this brief analyzes the channel potential and capacitance in channel-stack type 3-D NAND flash memory structure. In addition, the effects of geometrical parameters on 3-D NAND flash design with gate-all-around and double-gate devices are studied. The model can be incorporated into a compact circuit model for 3-D NAND flash design optimization.
Keywords :
NAND circuits; flash memories; integrated circuit design; integrated circuit modelling; three-dimensional integrated circuits; 3D NAND flash design optimization; capacitance; channel potential; channel-stack type 3D NAND flash memory structure; circuit model; double-gate devices; geometrical parameter effect; predictive modeling; Ash; Capacitance; Electric potential; IEEE Potentials; Logic gates; Predictive models; Solid modeling; 3-D NAND flash memory; capacitance modeling; nanowire SONOS; stacked array;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2355918
