DocumentCode :
1756811
Title :
Miscorrelation Between Air Gap Discharge and Human Metal Model Stresses Due to Multi-Finger Turn-On Effect
Author :
Yunfeng Xi ; Malobabic, Slavica ; Vashchenko, Vladislav ; Liou, Juin J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Volume :
14
Issue :
3
fYear :
2014
fDate :
Sept. 2014
Firstpage :
864
Lastpage :
868
Abstract :
Operation of NLDMOS-SCR devices under the human metal model (HMM) and IEC air gap electrostatic discharge (ESD) stresses has been studied based on both the pulsed measurements and mixed-mode simulations. Under the IEC air gap testing, the devices are found to suffer the non-uniform multi-finger turn-on behavior and hence a relatively low passing level, whereas both the IEC contact and HMM stresses do not give rise to such an adversary effect and result in a considerably higher passing level. It is further shown that the non-uniform multi-finger turn-on effect depends on the stress pulse rise time. Such dependence has also been examined and verified using the transmission line pulsing (TLP) technique with rise times ranging from 10 to 40 ns.
Keywords :
IEC standards; air gaps; electrostatic discharge; pulse measurement; thyristors; transmission lines; ESD stresses; HMM; IEC air gap testing; NLDMOS-SCR devices; TLP technique; electrostatic discharge stresses; human metal model; mixed-mode simulations; nonuniform multifinger turn-on behavior; passing level; pulsed measurements; stress pulse rise time; time 10 ns to 40 ns; transmission line pulsing technique; Discharges (electric); Electrostatic discharges; Fingers; Hidden Markov models; IEC; IEC standards; Stress; ESD; HMM; IEC; NLDMOS-SCR; mix-mode simulation; non-uniform triggering;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2014.2332432
Filename :
6853343
Link To Document :
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