Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide $({\rm SCCO}_{2})$ fluid is used as a low temperature treatment. In this letter, the ${\rm Zn{:}SiO}_{x}$ thin films are treated by ${\rm SCCO}_{2}$ fluid mixed with pure water. After ${\rm SCCO}_{2}$ fluid treatment, the resistive switching qualities of the ${\rm Zn{:}SiO}_{x}$ thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the ${\rm SCCO}_{2}$ -treated ${\rm Zn{:}SiO}_{x}$ thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.