Energy-Efficient Artificial Synapses Based on Flexible IGZO Electric-Double-Layer Transistors

Author

Jumei Zhou ; Ning Liu ; Liqiang Zhu ; Yi Shi ; Qing Wan

Author_Institution

Sch. of Electron. Sci. & Eng., Nanjing Univ., Nanjing, China

Volume

36

Issue

2

fYear

2015

fDate

Feb. 2015

Firstpage

198

Lastpage

200

Abstract

Flexible low-voltage indium-gallium-zincoxide (IGZO) electric-double-layer transistors are fabricated on polyethylene terephthalate substrates at room temperature and proposed for energy-efficient artificial synapse application. The IGZO channel conductance and the gate voltage pulse are regarded as synaptic weight and synaptic spike, respectively. The energy consumption of our IGZO synaptic transistor is estimated to be as low as ~0.23 pJ/spike. Short-term synaptic plasticity and high-pass filtering behaviors are also mimicked in an individual IGZO synaptic transistor.

Keywords

electrochemistry; energy conservation; gallium compounds; high-pass filters; indium compounds; liquid theory; organic compounds; transistors; IGZO channel conductance; IGZO synaptic transistor; InGaZnO; energy consumption; energy-efficient artificial synapse application; flexible IGZO electric-double-layer transistor; flexible low-voltage indium-gallium-zinc-oxide electric-double-layer transistor; gate voltage pulse; high-pass filtering behavior; polyethylene terephthalate substrate; short-term synaptic plasticity; synaptic spike; synaptic weight; temperature 293 K to 298 K; Energy consumption; Films; Logic gates; Positron emission tomography; Protons; Substrates; Transistors; Artificial synapse; Biological filter; IGZO electric-double-layer transistors; artificial synapse; biological filter;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2381631

Filename

6985580