Energy Dependence of Tungsten-Dominated SEL Cross Sections

Author

Alia, R. Garcia ; Brugger, M. ; Danzeca, S. ; Ferlet-Cavrois, Veronique ; Poivey, C. ; Roed, Ketil ; Saigne, F. ; Spiezia, G. ; Uznanski, Slawosz ; Saigne, F.

Author_Institution

CERN, Genève, Switzerland

Volume

61

Issue

5

fYear

2014

fDate

Oct. 2014

Firstpage

2718

Lastpage

2726

Abstract

The energy dependence of proton-induced Single Event Latchup (SEL) failures is investigated for different Static Random Access Memories (SRAMs) and an Analog-to-Digital Converter (ADC) through experimental measurements in the 30-230 MeV range. It is observed that for several of them, the measurements are not compatible with a saturation below the maximum energy tested. A Monte Carlo based model is proposed that explains the observed cross section increase through the presence of tungsten near the sensitive region and is used to extrapolate the SEL cross section to larger energies. The significant cross section increases expected by the model up to 3 GeV are quantified and discussed, potentially having a strong impact on the failure rate for energetic environments such as high-energy accelerators or the avionics contexts.

Keywords

SRAM chips; analogue-digital conversion; Monte Carlo based model; SRAM; Single Event Latchup; Static Random Access Memories; analog-to-digital converter; avionics contexts; electron volt energy 30 MeV to 230 MeV; energetic environments; high-energy accelerators; proton-induced SEL failures; tungsten-dominated SEL cross sections; Context; Large Hadron Collider; Protons; Random access memory; Silicon; Tungsten; ${tt FLUKA}$ ; CERN; COTS; Large Hadron Collider (LHC); Monte Carlo simulation; hardness assurance; high-Z materials; single event latchup (SEL);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2350538

Filename

6913577