DocumentCode :
1757211
Title :
500 ^{\\circ}{\\rm C} Bipolar Integrated OR/NOR Gate in 4H-SiC
Author :
Lanni, Luigia ; Malm, B. Gunnar ; Ostling, Mikael ; Zetterling, Carl-Mikael
Author_Institution :
Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Kista, Sweden
Volume :
34
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
1091
Lastpage :
1093
Abstract :
Successful operation of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter coupled logic is reported from -40 °C to 500 °C. Nonmonotonous temperature dependence (previously predicted by simulations but now measured) was observed for the transistor current gain; in the range -40 °C-300 °C it decreased when the temperature increased, while it increased in the range 300 °C-500 °C. Stable noise margins of ~ 1 V were measured for a 2-input OR/NOR gate operated on -15 V supply voltage from 0 °C to 500 °C for both OR and NOR output.
Keywords :
NOR circuits; bipolar integrated circuits; bipolar transistors; silicon compounds; wide band gap semiconductors; SiC; bipolar integrated OR-NOR gate; digital integrated circuits; emitter coupled logic; low-voltage n-p-n bipolar transistors; nonmonotonous temperature; stable noise margins; temperature -40 degC to 500 degC; transistor current gain; voltage -15 V; Logic gates; Resistance; Silicon carbide; Temperature dependence; Temperature distribution; Temperature measurement; Transistors; Bipolar junction transistor (BJT); OR/NOR gate; emitter coupled logic (ECL); high-temperature integrated circuits (ICs); silicon carbide (SiC);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2272649
Filename :
6584034
Link To Document :
بازگشت