Title :
New Superjunction LDMOS With the Complete Charge Compensation by the Electric Field Modulation
Author :
Baoxing Duan ; Song Yuan ; Zhen Cao ; Yintang Yang
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´an, China
Abstract :
A new superjunction (SJ) LDMOS has been proposed with the complete charge compensation by the electric field modulation in this letter for the first time. The substrate-assisted depletion, produced due to the p-type substrate for the n-channel SJ-LDMOS, has been eliminated by the electric field modulation produced due to the step n-type buffered layer. The charge for the n- and p-type drifts has been depleted completely. Moreover, a new electric field peak has been introduced in the surface electric field distribution, which makes the lateral surface electric field uniform. The breakdown voltage has been improved for the new SJ-LDMOS compared with the conventional SJ-LDMOS because of the uniform surface electric field. By simulating and experimental results, the breakdown voltage of the new SJ-LDMOS with the electric field modulation has been increased by ~49% compared with the conventional LDMOS, and improved by ~30% compared with the conventional SJ-LDMOS.
Keywords :
MOSFET; charge compensation; electric breakdown; electric charge; modulation; surface charging; breakdown voltage; complete charge compensation; electric field modulation; lateral surface electric field uniform; n-channel SJ-LDMOS; n-type buffered layer; p-type buffered layer; p-type substrate; substrate-assisted depletion; superjunction lateral double-diffused MOSFET; surface electric field distribution; Junctions; Logic gates; Modulation; Power semiconductor devices; Silicon; Substrates; LDMOS; Super junction; breakdown voltage; electric field modulation; substrate-assisted depletion;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2359293
