Title :
Modeling of Multiple-Quantum-Well p-i-n Photodiodes
Author :
Gan Zhou ; Runge, Patrick
Author_Institution :
Fraunhofer Heinrich Hertz Inst., Berlin, Germany
Abstract :
A model for multiple-quantum well (MQW) p-i-n photodiode (PD) is presented. The model accounts for the responsivity spectrum and the polarization-dependent loss. The important physical effects for modeling MQW PDs are the carrier transit time through the MQW layers and the free carrier density in the quantum wells. Furthermore, both effects influence the internal quantum efficiency and saturation of the optical absorption. The model is verified by comparing with the measurement results of a waveguide integrated MQW p-i-n PD. It is suitable for optimizing the design and describing the properties of MQW p-i-n PDs.
Keywords :
carrier density; infrared spectra; light polarisation; optical design techniques; optical losses; p-i-n photodiodes; quantum well devices; semiconductor device models; semiconductor quantum wells; MQW layers; MQW p-i-n PD; carrier transit time; free carrier density; internal quantum efficiency; multiple-quantum-well p-i-n photodiodes; optical absorption saturation; polarization-dependent loss; responsivity spectrum; Absorption; Charge carrier density; Electric fields; Excitons; Quantum well devices; Radiative recombination; Multiple-quantum well; exciton; free carrier density; model; photodiode; polarization-dependent loss; responsivity; saturation; transit time;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2014.2305015
