Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors

Transparent amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) were fabricated using spin-coating technique at a low annealing temperature of 300 ^°C on the 200 mm × 200 mm glass substrate. Solution-processed high-dielectric zirconium oxide dielectric layer, with its amorphous structure and smooth surface, was used to reduce the TFT operating voltage. The resulting TFT was produced with a maximum process temperature of 300 ^°C, and had a saturation mobility of 0.8 cm²/V s, an ON/OFF ratio of 10⁴, and a threshold voltage of 0.1 V.