• DocumentCode
    1757712
  • Title

    A Continuous Electrical Conductivity Model for Monolayer Graphene From Near Intrinsic to Far Extrinsic Region

  • Author

    Bhattacharya, Surya ; Saha, D. ; Bid, Aveek ; Mahapatra, Santanu

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Indian Inst. of Inf. Technol. at Allahabad, Allahabad, India
  • Volume
    61
  • Issue
    11
  • fYear
    2014
  • fDate
    Nov. 2014
  • Firstpage
    3646
  • Lastpage
    3653
  • Abstract
    We present a closed-form continuous model for the electrical conductivity of a single layer graphene (SLG) sheet in the presence of short-range impurities, long-range screened impurities, and acoustic phonons. The validity of the model extends from very low doping levels (chemical potential close to the Dirac cone vertex) to very high doping levels. We demonstrate complete functional relations of the chemical potential, polarization function, and conductivity with respect to both doping level and temperature ((T) ), which were otherwise developed for SLG sheet only in the very low and very high doping levels. The advantage of the continuous conductivity model reported in this paper lies in its simple form which depends only on three adjustable parameters: the short-range impurity density, the long-range screened impurity density, and temperature (T) . The proposed theoretical model was successfully used to correlate various experiments in the midtemperature and moderate density regimes.
  • Keywords
    chemical potential; doping profiles; electrical conductivity; graphene; impurities; impurity states; monolayers; phonons; C; Dirac cone vertex; acoustic phonons; chemical potential; closed-form continuous model; complete functional relations; doping levels; electrical conductivity model; long-range screened impurity density; monolayer graphene; polarization function; short-range impurity density; single layer graphene sheet; Charge carrier density; Chemicals; Conductivity; Electric potential; Graphene; Impurities; Scattering; Charged impurity; chemical potential; graphene; resistance; screening;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2014.2358683
  • Filename
    6914564