DocumentCode
1757712
Title
A Continuous Electrical Conductivity Model for Monolayer Graphene From Near Intrinsic to Far Extrinsic Region
Author
Bhattacharya, Surya ; Saha, D. ; Bid, Aveek ; Mahapatra, Santanu
Author_Institution
Dept. of Electron. & Commun. Eng., Indian Inst. of Inf. Technol. at Allahabad, Allahabad, India
Volume
61
Issue
11
fYear
2014
fDate
Nov. 2014
Firstpage
3646
Lastpage
3653
Abstract
We present a closed-form continuous model for the electrical conductivity of a single layer graphene (SLG) sheet in the presence of short-range impurities, long-range screened impurities, and acoustic phonons. The validity of the model extends from very low doping levels (chemical potential close to the Dirac cone vertex) to very high doping levels. We demonstrate complete functional relations of the chemical potential, polarization function, and conductivity with respect to both doping level and temperature ((T) ), which were otherwise developed for SLG sheet only in the very low and very high doping levels. The advantage of the continuous conductivity model reported in this paper lies in its simple form which depends only on three adjustable parameters: the short-range impurity density, the long-range screened impurity density, and temperature (T) . The proposed theoretical model was successfully used to correlate various experiments in the midtemperature and moderate density regimes.
Keywords
chemical potential; doping profiles; electrical conductivity; graphene; impurities; impurity states; monolayers; phonons; C; Dirac cone vertex; acoustic phonons; chemical potential; closed-form continuous model; complete functional relations; doping levels; electrical conductivity model; long-range screened impurity density; monolayer graphene; polarization function; short-range impurity density; single layer graphene sheet; Charge carrier density; Chemicals; Conductivity; Electric potential; Graphene; Impurities; Scattering; Charged impurity; chemical potential; graphene; resistance; screening;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2358683
Filename
6914564
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