Title :
Low-Dropout Voltage Source: An Alternative Approach for Low-Dropout Voltage Regulators
Author :
Aminzadeh, Hamed ; Nabavi, Mohammad R. ; Serdijn, Wouter A.
Author_Institution :
Dept. of Electr. Eng., Payame Noor Univ., Tehran, Iran
Abstract :
In this brief, a high-order temperature-compensated 0.6-V low-dropout voltage source (LDVS) is realized in standard 0.13-μm CMOS technology. The LDVS operates at supply voltages down to 0.75 V and consumes only 39 μA while providing up to 100 mA of load current. Gate-to-channel capacitance values of MOSFETs are employed to implement the capacitors, reducing chip area and enabling integration in any inexpensive CMOS technology. The regulation loop is compensated using a combined pole-splitting and feedforward technique, which results in stable operation from a no-load current to 100 mA of full-load current. A temperature-dependent current-driven voltage generator is proposed to suppress the line-voltage sensitivity of the LDVS. To further improve line regulation, a line-voltage compensation circuit is introduced, which lowers the line sensitivity by about three times down to 0.54%/V. With a supply voltage of 1 V and no output filtering capacitor, the mean power-supply rejection is -51 and -24 dB for 1 and 10 MHz, respectively. The proposed LDVS requires no startup circuit. The 0.1% startup settling time is 73 μs with a supply voltage of 0.8 V and a load current of 1 mA. In the temperature range of -25 °C- +85 °C, it demonstrates a maximum temperature drift of only 32 ppm/°C.
Keywords :
CMOS integrated circuits; power supply circuits; voltage regulators; CMOS technology; current 1 mA; current 100 mA; current 39 muA; current driven voltage generator; feedforward technique; gate-to-channel capacitance; high order voltage source; line regulation; line voltage compensation circuit; low dropout voltage regulator alternative; low dropout voltage source; pole splitting technique; regulation loop; size 0.13 mum; temperature -25 C to 85 C; temperature compensated voltage source; temperature dependent voltage generator; voltage 0.6 V; voltage 0.75 V; voltage 0.8 V; voltage 1 V; CMOS integrated circuits; CMOS technology; Capacitors; Photonic band gap; Regulators; Temperature measurement; Voltage control; Band-gap reference; line-voltage compensation; low-dropout (LDO) regulator; metal??oxide??semiconductor field-effect transistor (MOSFET) only; start up;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2014.2319952