DocumentCode :
1757762
Title :
Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting
at
 InAs quantum well MOSFETs incorporating a vertical spacer formed by metal-organic chemical vapor deposition epitaxial regrowth. By adopting a 12-nm-thick vertical spacer between the channel and the N+ S/D, OFF-state characteristics are significantly improved. A device with a 40-nm-Lg and 12-nm-thick spacer shows 2.5-mS/μm peak transconductance (gm), 86-mV/decade subthreshold swing at V<sub>DS</sub> = 0.5 V, 83-mV/V drain-induced barrier lowering, and 482-μA/μm ON-current at 100-nA/μm OFF-current and VDD = 0.5 V. In addition, a 3.0-mS/μm peak gm at V<sub>DS</sub> = 0.5 V is achieved in an 18-nm-Lg device with a 2-nm-thick spacer, the highest reported peak gm of any field-effect transistor.</div>
</div>
<div class='row'>
<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>III-V semiconductors; MOCVD; MOSFET; indium compounds; quantum well devices; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; InAs; OFF-state characteristics; S/D quantum well MOSFETs; field-effect transistor; highly scalable raised source-drain quantum well MOSFETs; metal-organic chemical vapor deposition epitaxial regrowth; size 12 nm; size 18 nm; size 2 nm; vertical spacer; voltage 0.5 V; Electrostatics; Indium compounds; Leakage currents; Logic gates; MOSFET; Performance evaluation; Resistance; III-V MOSFETs; InAs channel; InAs channel.; S/D regrowth; vertical spacer;</div>
</div>
<div class='row'>
<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fLanguage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>English</div>
</div>
<div class='row'>
<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Journal_Title : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electron Device Letters, IEEE</div>
</div>
<div class='row'>
<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Publisher : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>ieee</div>
</div>
<div class='row'>
<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>ISSN : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>0741-3106</div>
</div>
<div class='row'>
<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Type : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>jour</div>
</div>
<div class='row'>
<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>DOI : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10.1109/LED.2014.2317146</div>
</div>
<div class='row'>
<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Filename : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>6805175</div>
</div>
<div class='row'>
<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Link To Document : </div><div class='valueDiv leftDirection leftAlign fullRecValueEnglish col-xs-8 col-sm-10'><a href='https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1757762' target='_blank'>https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1757762</a></div>
</div>
</div>
<div class='leftDiv labelDiv leftAlign backLinkEnglish'><a href='javascript:history.back()'><img src='../CSS/Back.png' class='backImage' alt=)